600V, SMPS Series N-Channel IGBT

The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 C and 150 C. This IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49347.